unit w nm /w g unit a ma ns ns ns a ns a parameter/test conditions electrical characteristics t c =25c unless otherwise specified v r =1200v symbol trr reverse recovery time (i f = 0.5a, i r =1a, i rr = 0.25a) 25 a weight i fsm rms forward current t j =45 ,t=10ms, 50hz, sine i f(av) 1.0 junction to case thermal resistance torque 1.1 -55 to +125 t c =100 21 t c =100 non repetitive surge forward current power dissipation module to sink t stg i f(rms) average forward current p d storage temperature range t j v rrm v r maximum repetitive reverse voltage r thjc v r =1200v, t j = 125 i f =15a,t j =125 trr i rrm v 5 i f =15a 35 40 3.2 absolute maximum ratings t c =25c unless otherwise specified symbol parameter/test conditions maximum d.c. reverse voltage 1200 values 150 v 15 125 -55 to +150 2.5 junction temperature min. typ. 10 72 i rm maximum reverse leakage current 2.8 2.3 maximum reverse recovery current di f /dt = -200a/ s v f recommended m3 max. 1 di f /dt = -200a/ s ,t j =125 i f = 15a,v r =600v, maximum reverse recovery current 7.5 240 30 i rrm trr reverse recovery time i f =15a,v r =600v, forward voltage reverse recovery time trr reverse recovery time (i f = 1a, di f /dt = -200a/ s, v r = 30v) ? STTH1512D pb free plating product STTH1512D 15 ampere,1200 volt switchmode single fast recovery epitaxial diode pb ultrafast recovery time soft recovery characteristics low recovery loss low forward voltage high surge current capability low leakage current application general description freewheeling, snubber, clamp inversion welder pfc plating power supply ultrasonic cleaner and welder converter & chopper ups product feature STTH1512D using the lastest fred fab process(planar passivation chip) with ultrafast and soft recovery characteristic. to-220ac/to-220c-2p internal configuration cathode(bottom side metal heatsink) cathode anode base backside ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/3 rev.05
figure 4. reverse recovery charge vs di f /dt figure 6.transient thermal impedance figure 3. reverse recovery current vs di f /dt figure 1. forward voltage drop vs forward current figure 2. reverse recovery time vs di f /dt figure 5.forward current vs case temperature 0 5 10 15 20 25 30 012345 25 125 0 100 200 300 400 500 100 200 300 400 500 25 125 0 3 6 9 12 15 100 200 300 400 500 25 125 0 5 10 15 20 25 50 75 100 125 150 175 dc di f /dt(a/ s) v f (v) i f (a) t rr (ns) t c ( ) i f (a) i rrm (a) di f /dt(a/ s) 0 400 800 1200 1600 2000 100 200 300 400 500 25 125 di f /dt(a/ s) q rrm (nc) 0.01 0.1 1 10 0.001 0.01 0.1 1 10 rectangular pulse duration (s) z thjc (k/w) ? STTH1512D ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/3 rev.05
figure 8. package outline dimensions in (mm) figure 7. diode reverse recovery test circuit and waveform ? STTH1512D ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 3/3 rev.05
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